| PART |
Description |
Maker |
| NE33200 NE33200M NE33200N |
SUPER LOW NOISE HJ FET
|
California Eastern Labs
NEC
|
| NE425S01 NE425S01-T1 NE425S01-T1B |
C TO KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511 |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
CEL[California Eastern Labs]
|
| EPB018B5 EPB018B7 EPB018B9-70 |
Super Low Noise High Gain Heterojunction FET
|
Excelics Semiconductor, Inc.
|
| NE3514S02-T1C NE3514S02 NE3514S02-T1C-A NE3514S02- |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
|
| NE32400 NE24200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| NE3503M04 NE3503M04-A NE3503M04-T2-A |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
CEL
California Eastern Labs
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五（巴西）直| 15mA的我（直）|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp.
NEC[NEC]
|
| TL071M TL071I TL071C TL071B TL071_01 TL071A TL071A |
LOW NOISE SINGLE JFET OP-AMPS
LOW NOISE J-FET SINGLE OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FHX13LG FHX14LG |
Super Low Noise HEMT
|
Eudyna Devices Inc
|
| ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
