| PART |
Description |
Maker |
| NT5DS16M16CS NT5DS16M16CS-5T NT5DS16M16CS-6K NT5DS |
256Mb DDR Synchronous DRAM
|
NanoAmp Solutions, Inc.
|
| EM48AM1684VBB-75F EM48AM1684VBB-75FE EM482M1684VBB |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
http://
|
| EM48AM1684VTE-6F EM48AM1684VTE-6FE EM48AM1684VTE-7 |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
| H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| NT5SV32M8AT-8B NT5SV32M8AT-75B NT5SV32M8AT-7K NT5S |
256Mb Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| EM48AM1684VTG-7F EM48AM1684VTG-7FE |
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
