| PART |
Description |
Maker |
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| HLMP-UL07 HLMP-UL14 HLMP-UG06 HLMP-UH06 HLMP-DL08 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
T-1 - 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP-PowerPAD -40 to 85
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SON -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SOIC -40 to 85
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP-PowerPAD -40 to 85
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 10x31.5 mm; Packaging: Bulk
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-SOIC -40 to 85
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 10-FY07BIA050SM-M523E38 10-FY07BIA050SM-M523E38-3 |
Ultra High-Speed IGBT and Diode
|
Vincotech
|
| MTD5010M |
Ultra High Speed Photo Diode
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| 1SS344 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS201 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS272 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 1SS387 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS196 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS337 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS352 |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE
|
Guangdong Kexin Industrial Co.,Ltd
|
| 5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器)
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier
|
Intersil Corporation
Intersil, Corp.
|
