PART |
Description |
Maker |
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT35GP120B2DQ2 APT35GP120B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP90B2DQ2 APT40GP90B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60B2DQ2G APT40GP60B2DQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technolo... Advanced Power Technology
|
APT30GP60BG APT30GP60S |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP90BDQ1G APT25GP90BDQ1 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP90B |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT65GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT45GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120B2 |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|