| PART |
Description |
Maker |
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
|
| FD1500AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 932C2W2P2J-F 932C4W2P2J-F 932C6W2P2J-F 932C7W2P2J- |
Polypropylene Film Capacitors High Voltage/High Frequency Switching Power Supplies
|
Cornell Dubilier Electronics, Inc.
|
| ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101 |
High Frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8
High Frequency Clock Multiplier(高频时钟乘法器（掩摸可编程单片模拟锁相环设备
Preprogrammed High Speed Frequency Multiplier
|
Exar, Corp.
EXAR[Exar Corporation]
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| FP1107R1-R07-R FP1107R2-R07-R FP1107R1-R12-R FP110 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| HF05-1A54-6 HF05-A54-5 HF05-A54-6 HF05-A54-7 HF05- |
High Frequency and High Power Reed Relays
|
Meder Electronic
|
| KSC2690 KSC2690A |
NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| HG-1012JA HG-2012JA |
(HG-1012JA / HG-2012JA) High Stability High Frequency Oscillator
HIGH-STABILITY HIGH-FREQUENCY OSCILLATOR 高稳定高频振荡器
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List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K- |
High Voltage, High Frequency, Ultra High Peak Currents
|
Cornell Dubilier Electr...
http://
Cornell Dubilier Electronics
|
