| PART |
Description |
Maker |
| TC1268 TC1268-2.5VOA TC1268-2.5VOATR |
The TC1268 is a fixed output, fast turn-on, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically ...
500mA Fixed Output / Fast Response CMOS LDO with Shutdown
500mA Fixed Output, Fast Response CMOS LDO with Shutdown
|
Microchip Technology Inc.
|
| TC850CPL TC850IJL |
15-Bit/ Fast Integrating CMOS A/D Converter
15-Bit, Fast Integrating CMOS A/D Converter
CAP 0.33UF 25V 20% Z5U SMD-1206 TR-7 PLATED-NI/SN
|
Microchip Technology Inc.
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V4400C-60 MB81V4400C-70 |
CMOS 1M x 4 Bit Fast Page Mode Dynamic RAM(CMOS 1M x 4位快速页模式动态RAM)
|
Fujitsu Limited
|
| MB814100A-80 MB814100A-60 MB814100A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400D-60 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM)
CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| IDT54FCT22 IDT54FCT2245AT IDT54FCT2245ATD IDT54FCT |
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FCT SERIES, 8-BIT TRANSCEIVER, INVERTED OUTPUT, PDSO20
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FCT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDFP20
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS 快速CMOS八路双向收发
CAP 0.47UF 16V 80-20% Y5V SMD-0805 TR-7-PL SN-NIBAR 快速CMOS八路双向收发
CAP 0.22UF 50V 80-20% Z5U SMD-1210 TR-7-PL SN-NIBAR 快CMOS八路双向收发
Multilayer Ceramic Chip Capacitor; 1.0uF, 25V, Y5V, SMD-1206 ; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CAP 1.5UF 25V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.15UF 50V 5% X7R SMD-1210 TR-7-PL SN-NIBAR
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
Integrated Device Techn...
|
| IDT74FCT162H272CTPA IDT74FCT162H272CTPAB IDT74FCT1 |
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, CDFP56
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, PDSO56
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER 快速CMOS 12位同步总线交换
CAP 47UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-220
CAP 4.7UF 35V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-700
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
