| PART |
Description |
Maker |
| APT40GP90J |
MOSFET
POWER MOS 7 IGBT
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology]
Advanced Power Electronics, Corp.
|
| APT50GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT45GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP60BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistor
From old datasheet system
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT30GP60B |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
