PART |
Description |
Maker |
APT60GU30B APT60GU30S |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT65GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT40GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT26GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT32GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT35GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120B2 |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|