| PART |
Description |
Maker |
| K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
| GS8641ZV18 GS8641ZV32 GS8641ZV36 GSITECHNOLOGY-GS8 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS8640Z18 GS8640Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS8642ZV72 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I |
72Mb SigmaQuad-II Burst of 4 SRAM
|
http://
GSI Technology
|
| GS864036T-200 GS864036T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
| GS864018T-XXX |
(GS8640xxT) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
| GS864418E-200 GS864418E-200I GS864418E-133 GS86441 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8640Z18T-250I GS8640Z18T GS8640Z18T-167 GS8640Z1 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS864036GT-167I GS864036T-200 GS864018GT-167 GS864 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
