| PART |
Description |
Maker |
| MS2207 |
Bipolar/LDMOS Transistor
|
Microsemi Corporation
|
| PTFB213004F |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| MS1001 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Bipolar/LDMOS Transistor
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi Corporation
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BSS73CSM BSS73CSM-QR-B |
Bipolar NPN Device in a Hermetically sealed LCC1
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Seme LAB
SEMELAB LTD
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| TMF8901B |
Si RF LDMOS Transistor
|
AUK corp
|
| BLF6G10LS-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
