| PART |
Description |
Maker |
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
| 2417K4A |
NetLight2417K4A1300nmLaser2.5Gbits/sTransceiver
NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver
|
AgereSystems
AGERE[Agere Systems]
|
| LO503NBG1-15Q |
Blue green 15 degrees 5 mm LED lamp with water transparent lens. Wavelength(typ.) 505 nm. Luminous intensity(typ.) 4500 mcd.
|
Marktech Optoelectronics
|
| 1SS300 |
Small package Small total capacitance :CT = 2.2 pF(Typ)Fast reverse recovery time :trr=1.6 ns(Typ)
|
TY Semiconductor Co., Ltd
|
| TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
LED LAMP PANEL CIRCUIT INDICATOR
From old datasheet system
TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd.
TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor]
Marktech Optoelectronics
|
| 2N5754 2N5755 2N5756 2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V.
2.5-A silicon triac. Voltage(typ) 400 V.
2.5-A silicon triac. Voltage(typ) 200 V.
2.5-A silicon triac. Voltage(typ) 100 V.
2.5-A Silicon Triacs
|
General Electric Solid State
Solid State Optronic
N.A.
|
| 2SC3583 |
NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
NPN Silicon Epitaxial Transistor
|
TY Semiconductor Co., L...
TY Semicondutor
|
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| 2417H4A 2417G4A 2417G4ANETLIGHT |
Dual Nonvolatile Digital Potentiometer and Secure Memory
NetLight2417G4Aand2417H4AATM/SONET/SDHTransceivers
NetLight 2417G4A and 2417H4A ATM/SONET/SDH Transceivers
|
AgereSystems
AGERE[Agere Systems]
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
