| PART |
Description |
Maker |
| 2SJ600 2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3
|
NEC
|
| 2SJ604-S 2SJ604-Z 2SJ604-ZJ |
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RonMAX=30m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
| IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier
Power MOSFET
|
| IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
| IRLD024 |
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
HEXFET? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
|
IRF[International Rectifier]
|
| IRF9Z14 |
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
|
IRF[International Rectifier]
|
| IRFD014 |
Power MOSFET(Vdss=60V/ Rds(on)=0.20ohm/ Id=1.7A)
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier
|
| FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ
N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
| IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 84A条?
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
|
International Rectifier, Corp.
|
| FW156 |
Pch Pch
From old datasheet system
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
