PART |
Description |
Maker |
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor http://
|
M368L3313CT1 |
32Mx64 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect
|
Samsung Electronic
|
M366S3323DTU |
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
M368L3313BT1 |
32M x 64 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
KMM375S3227BT |
32Mx72 SDRAM DIMM(32M x 72 动RAM模块) 32Mx72 SDRAM的内存(32M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
NT256S64VH8A0GM-75B NT256S64VH8A0GM-7K NT256S64VH8 |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
HYS72V32300GU-75-C2 HYS64V32300GU-75-C2 HYS64V3230 |
3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.32M的x 64/72-Bit56MB的内存模68针脚无缓冲DIMM模块 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.32M的x 64/72-Bit56MB的内存模68针脚无缓DIMM模块 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.32M的x 64/72-Bit256MB的内存模68针脚无缓冲DIMM模块
|
Infineon Technologies AG
|
HYMD232646A8-H HYMD232646A8-K HYMD232646A8-L HYMD2 |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|