| PART |
Description |
Maker |
| MP28251GD |
20V, 4A Synchronous Step-Down Converter
|
Monolithic Power Systems
|
| RS6508A RS6508A-ADSG RS6508A-50SP RS6508A-50SG RS6 |
2A, 20V, 1.2MHz DC/DC Asynchronous Step┸Down Converter
|
Orister Corporation
|
| TD1410C |
1.8A 380KHZ 20V PWM Buck DC/DC Converter
|
Techcode
|
| MP28258-A MP28258DD-A |
High Efficiency, Fast Transient, 3A, 4.2V-20V Input Synchronous Step-down Converter in QFN12
|
Monolithic Power Systems
Monolithic Power System...
|
| MP28248 MP28248GD |
High-Efficiency, Fast-Transient, 3A, 4.2V-20V Input Synchronous Step-down Converter in a QFN12 (2x3mm) Package
|
Monolithic Power Systems
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| CDBF0320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
|
Comchip Technology
|
| CDBW120-G |
Schottky Barrier Rectifiers Diodes, V-RRM=20V, V-R=20V, I-O=1A
|
Comchip Technology
|
| SC2441A09 |
1.8V to 20V Input 2-Phase Synchronous Step-down Controllers with Step-up Converter
|
Semtech Corporation
|
| IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SSG4520H12 |
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
