| PART |
Description |
Maker |
| 6DI100A-050 |
POWER TRANSISTOR MODULE 100 A, 600 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| BUT232V03 BUT232V_03 BUT232V |
NPN TRANSISTOR POWER MODULE
NPN TRANSISTOR POWER MODULE
140 A, 300 V, NPN, Si, POWER TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C)
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五（巴西）总裁| 50A条一（c
|
IXYS, Corp.
|
| MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| EVK75-050 2DI75S050A |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五（巴西）总裁| 75
|
Analog Devices, Inc.
|
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2DI150Z-100 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|
| 1DI300ZP-120 |
Power Transistor Module
|
Fuji Electric
|
| 1DI400A-120 |
POWER TRANSISTOR MODULE
|
http://
FUJI[Fuji Electric]
|
| 1DI300MN-120 |
Power Transistor Module
|
Fuji Electric
|
