PART |
Description |
Maker |
2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
BUV20 |
NPN MULTI - EPITAXIAL POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
BUV20 |
NPN MULTI - EPITAXIAL POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp. NEC[NEC]
|
OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
BUP54 |
NPN MULTI-EPITAXIAL TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
UPA804TC UPA804 UPA804TC-T1 PA804TC |
NPN Epitaxial Transisitor(NPN澶?欢?朵?绠? NPN Epitaxial Transisitor(NPN外延晶体 NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp. NEC[NEC]
|
TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type MOSFET TPC Series
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SC4703 2SC4703-T1 2SC4703-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
2SC3668 |
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) npn型外延式(功率放大器,开关应用) NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|