| PART |
Description |
Maker |
| CM50AD05-12H |
Medium Power Switching Use Flat Base
|
Mitsubishi Electric
|
| CM30AD00-12H |
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM50AD00-12H |
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM15AD00-12H |
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM10MD1-12H |
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2N4900X 2N4898X 2N4899X |
PNP Epitaxial Base Medium Power Transistor（TO-66 Metal Package中等功率PNP外延晶体管（TO-66 金属封装 进步党外延基地中等功率晶体管（至66金属封装）（中等功率进步党外延晶体管（至66金属封装））
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 7A19/50 |
7 watt; A19 Compact Fluorescent; 5000K; 82 CRI; Medium base; 120 volts
|
Satco Products, Inc.
|
| 23R40/41 |
23 watt; R40 Compact Fluorescent; 4100K; 82 CRI; Medium base; 120 volts
|
Satco Products, Inc.
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
