| PART |
Description |
Maker |
| 2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A)
Power Transistor (-60V, -3A)
Power Transistor (-60V -3A)
Power Transistor(-60V, -3A)
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
|
ROHM[Rohm]
|
| 2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd.
ROHM[Rohm]
|
| 2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
POWER TRANSISTORS(3A/60V/30W)
POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| 2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
| DXT2010P5 DXT2010P5-13 DXT2010P5-15 |
60V NPN MEDIUM POWER TRANSISTOR PowerDI垄莽5
60V NPN MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 36A条（丁）|63AB
N-Channel NexFET Power MOSFET 8-SON -55 to 150
33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| 2SD231810 2SD2318 2SD2318TLV |
3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR CPT3, SC-63, 3 PIN
High-current gain Power Transistor (60V, 3A)
|
Rohm
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| 2SA2088 |
Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)
|
ROHM[Rohm]
|
| 2SC5824 |
Power transistor (60V, 3A)
|
Rohm CO.,LTD.
|
