| PART |
Description |
Maker |
| 2SB1590K 2SD2444K |
Power Transistor (-15V, -1A, 15V, 1A) 功率晶体管（- 15V的，- 1A型，15V的，1A）条
Power Transistor (-15V/ -1A/ 15V/ 1A)
|
Rohm Co., Ltd.
|
| ZXTN25015DFH ZXTN25015DFHTA |
15V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| ZXTDAM832TC ZXTDAM832 ZXTDAM832TA |
MPPS Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
| IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
| FMMT617TC |
15V NPN LOW SATURATION TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| 2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| IRGPC20M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
|
IRF[International Rectifier]
|
