| PART |
Description |
Maker |
| 2SJ656 |
High Output MOSFETs
General-Purpose Switching Device
|
SANYO[Sanyo Semicon Device]
|
| 2SK3101 2SK3101LS |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3703 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SK3706 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SK3816 |
High Output MOSFETs
|
SANYO
|
| 2SJ348 |
High Output MOSFETs
|
SANYO
|
| CPH6316 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SJ658 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFETs
|
IXYS[IXYS Corporation]
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
