| PART |
Description |
Maker |
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| HAT2028R-EL-E HAT2028RJ-EL-E HAT2028R-15 |
4 A, 60 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| UPA2700TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET 开N沟道功率MOSFET
|
NEC, Corp.
|
| UPA2707TP UPA2707TP-E2-AZ UPA2707TP-E1 UPA2707TP-E |
SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOSFET Power Switching
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
| GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http://
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RJK0346DPA RJK0346DPA-00-J0 |
65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0349DPA RJK0349DPA-00-J0 |
45 A, 30 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
