PART |
Description |
Maker |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
ETC[ETC]
|
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
ETC[ETC]
|
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
General Electric Solid State
|
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor From old datasheet system N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|