| PART |
Description |
Maker |
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM83135-001 2895 |
Hook-Up Wire; Conductor Size AWG:16; No. Strands x Strand Size:26 x 30; Jacket Color:Dark Blue; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM80814-005 |
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMicroelectronics
SGS Thomson Microelectronics
|
| AM1214-300 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
| MS2228 |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
|
| BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| AM81214-060 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
