PART |
Description |
Maker |
1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
CS5166/D CS5166-D |
5-Bit Synchronous CPU Controller with Power Good and Current Limit 5-Bit Synchronous CPU Controllerwith Power-Good and Current Limit
|
ON Semiconductor
|
13005 |
good high temperature
|
Nanjing International G...
|
STB30NF20L |
Very good manufacturing repeatability
|
STMicroelectronics
|
AP0903GYT-HF-16 |
Good Thermal Dissipation
|
Advanced Power Electron...
|
NCP3337 |
Power Good Low Dropout Regulator
|
ON Semiconductor
|
RKJXK12005 |
Compact design with a good space factor
|
Productwell Precision Elect.CO.,LTD
|
RKJXK13N01 |
Compact design with a good space factor
|
Productwell Precision Elect.CO.,LTD
|
RKJXK12N04-14 |
Compact design with a good space factor
|
Productwell Precision E...
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
AP4500GYT-HF AP4500GYT-HF14 |
Simple Drive Requirement, Good Thermal Performance
|
Advanced Power Electronics Corp.
|