| PART |
Description |
Maker |
| APT8043BFLL APT8043SFLL |
POWER MOS 7 800V 20A 0.430 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
| APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
| RJH1CM6DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| FGA20S120M |
1200V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| RJK0851DPB-00-J5 RJK0851DPB-13 |
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| NGTB20N120IHS |
IGBT 1200V 20A FS1 Induction Heating
|
ON Semiconductor
|
| FGA20N120FTD |
1200V, 20A, Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| NGTB20N120L |
IGBT 1200V 20A FS1 Gen Mkt
|
ON Semiconductor
|
| GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package
|
International Rectifier
|
