PART |
Description |
Maker |
SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
FD600R17KF6CB2 |
975 A, 1700 V, N-CHANNEL IGBT
|
|
DIM400PHM17-A000 |
400 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
CM1200E4C-34N |
1200 A, 1700 V, N-CHANNEL IGBT
|
POWEREX INC
|
CM600E2Y-34H |
HIGH POWER SWITCHING USE INSULATED TYPE 600 A, 1700 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
CM1000DUC-34SA |
Mega Power Dual IGBT 1000 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
2V7002W 2V7002WT1G 2N7002WT1G 2N7002W12 |
Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70
|
ON Semiconductor
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT 300 A, 1200 V, N-CHANNEL IGBT 100 A, 1000 V, N-CHANNEL IGBT 100 A, 1200 V, N-CHANNEL IGBT 75 A, 1000 V, N-CHANNEL IGBT 200 A, 1000 V, N-CHANNEL IGBT 50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG SIEMENS A G
|
SI6821DQ |
1700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
|