| PART |
Description |
Maker |
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| M36W0R6040B0 |
64 Mbit Flash Memory and 16 Mbit PSRAM Multi-Chip Package
|
STMicroelectronics
|
| M36W0R604040B0ZAQE M36W0R604040B0ZAQF M36W0R604040 |
64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package
|
Numonyx B.V
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位（多银行，多层次，突发）闪存32兆位00万16）移动存储芯片，1.8V电源多芯片封
CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
ER 23C 16 12 8 4 SKT RECP WALL
CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| SST34HF3244-70-4E-L1PE |
32 Mbit Concurrent SuperFlash 4/8 Mbit PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56
|
Silicon Storage Technology, Inc.
|
| SST34HF32A4-70-4E-LSE SST34HF32A4 SST34HF32A4-70-4 |
32 Mbit Concurrent SuperFlash 16 Mbit PSRAM ComboMemory
|
SST[Silicon Storage Technology, Inc]
|
