PART |
Description |
Maker |
ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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AGILENT TECHNOLOGIES INC Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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ATF54143 ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK ATF55143 |
Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
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ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET SOT223 N-CHANNEL ENHANCEMENT MODE
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Zetex Semiconductors Diodes Incorporated
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存,未定义建筑 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
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Lin Engineering, Inc. Unisonic Technologies Co., Ltd. Sullins Connector Solutions, Inc. Cypress Semiconductor, Corp.
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APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
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Advanced Power Technology, Ltd.
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1N4626 1N4110 1N4620 1N4624 1N4104 1N4627 1N4099 1 |
surface mount silicon Zener diodes 表面贴装硅稳压二极管 ZFKDSA 1.5C-5.0- 6 SO BN-GN SPC 16/ 6-ST-10,16 GMSTB 2,5/ HC/ 3-GF-7.62 LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE LOW LEVEL ZENER DIODES LOW CURRENT: 250A - LOW NOISE LOW LEVEL ZENER DIODES LOW CURRENT: 250μA - LOW NOISE
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Microsemi, Corp. Knox SemiconductorInc KNOX[Knox Semiconductor, Inc] KNOX[Knox Semiconductor Inc]
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1N5524 1N5545 1N5519 1N5520 1N5521 1N5522 1N5523 1 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极 LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE MSTBVA 2,5/13-G-5,08 LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
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Electronic Theatre Controls, Inc. Knox Semiconductor Inc KNOX[Knox Semiconductor Inc] KNOX[Knox Semiconductor, Inc]
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ATF-531P8 ATF-531P8-BLK ATF-531P8-TR2 ATF-531P8-TR |
DEMO-ATF-5X1P8 · Demonstration circuit board for ATF-501P8, ATF-511P8, ATF-521P8 and ATF-531P8 (2 GHz) ATF-531P8 · Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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