| PART |
Description |
Maker |
| BB402M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
| BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| BB503C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB501M BB501 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| BB504M |
BUILD IN BIASING CIRCUIT MOS FET IC VHF&UHF RF AMPLIFIER
|
Hitachi Semiconductor
|
| BB504M |
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| TBB1008 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB501CAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB304MDW-TL-E BB304M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB501M BB501MAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502M11 BB502MBS-TL-H |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
