| PART |
Description |
Maker |
| 2N6667 2N6666 2N6668 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| BDX53CG BDX53B07 |
Plastic Medium-Power Complementary Silicon Transistors
|
Rectron Semiconductor
|
| BD159-D |
Plastic Medium Power NPN Silicon Transistor
|
ON Semiconductor
|
| BD680AG |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| BD179-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| BD677 BD675 BD681 BD679 BD675A |
Plastic Medium-Power Silicon NPN Darlingtons
Plastic Medium?Power Silicon NPN Darlingtons
|
ON Semiconductor
|
| MJE350-D |
Plastic Medium Power PNP Silicon Transistor
|
ON Semiconductor
|
| 2N604007 2N6040G |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| TIP100 TIP102 TIP100-BP TIP101-BP TIP102-BP |
NPN Plastic Medium-Power Silicon Transistors
|
天津环球磁卡股份有限公司
Micro Commercial Components
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
