PART |
Description |
Maker |
BF909 BF909R |
N-channel dual gate MOS-FETs CANMS3124E16-26PF0
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF1109WR BF1109R BF1109 BF1109_R_WR_2 |
N-channel dual-gate MOS-FETs From old datasheet system
|
Philips
|
BF120210 BF1202.215 |
N-channel dual-gate PoLo MOS-FETs N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors
|
BF904A BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
|
BF908 BF908-R-2015 BF908-R-15 |
Dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
|
IXTZXXNXX IXTHXXNXX |
(IXTMxxxx) MOS FETs (IXTHxxxx) MOS FETs
|
IXYS
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
HAF2015RJ |
Thermal MOS FETs SILICON N CHANNEL MOS FET SERIES POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|