PART |
Description |
Maker |
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22LS-7510 BLF6G22LS-75 |
Power LDMOS transistor BLF6G22LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G22LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,; Product description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
SY3120-5LOU-C4-Q SY3120-5LOU-C6-Q SS5Y7-42-04-C10F |
VALVEBODY24VDC
MANIFOLD 4STATION MANIFOLD 6STATION MANIFOLD 6 STATION MANIFOLD 5STATION MANIFOLD 8 STATION MANIFOLD 4 STATION MANIFOLD 7 STATION MANIFOLD 5 STATION MANIFOLD 3 STATION MANIFOLD 3STATION MANIFOLD 7STATION 分水6 VALVE BODY 24VDC 阀4Vdc VALVE BASE 24VDC 阀4Vdc High Efficient Rectifier Diodes 阀4Vdc MANIFOLD 8STATION 分水STATION
|
Actel, Corp. SIEMENS AG TE Connectivity, Ltd. Prosperity Dielectrics Co., Ltd.
|
BLF6G22-180PN BLF6G22LS-180PN NXPSEMICONDUCTORSN.V |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Power LDMOS transistor BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
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TMS3705A1DRG4 RI-TMS3705ADR08 RI-TMS3705ADR |
LF BASE STATION IC
|
Pericom Semiconductor Corporation
|
820-IF140.0M-F |
Base Station & Repeater
|
Oscilent Corporation
|
835-IF240.0M-D |
Base Station & Repeater
|
Oscilent Corporation
|
813-IF75.0M-B |
Base Station & Repeater
|
Oscilent Corporation
|