| PART |
Description |
Maker |
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MAX6332UR20D3-T MAX6333UR20D3-T MAX6334UR20D3-T MA |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
3-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits
3-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits
3-Pin Ultra-Low-Voltage Low-Power P Reset Circuits
From old datasheet system
3-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits
3-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits
TV 79C 79#22D SKT RECP 3引脚，超低电压，低功耗レP复位电路
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| IS62WV51216ALL IS62WV51216BLL-45B IS62WV51216ALL-7 |
512K X 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS62WV5128DALL-55BI IS62WV5128DALL-55BLI IS62WV512 |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV51216ALL IS62WV51216BLL |
(IS62WV51216A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62WV6416BLL IS62WV6416BLL-45B IS62WV6416BLL-45BI |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV1288ALL-70BI IS62WV1288BLL-45TI IS62WV1288BL |
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PDSO32
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PBGA36
|
Integrated Silicon Solution, Inc.
|
| BS616UV1610FI BS616UV1610 BS616UV1610BC BS616UV161 |
Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS62UV1027SIG10 |
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
|
BSI
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
