| PART |
Description |
Maker |
| BS870 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| BS170 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SC4015 2SC3415S 2SC4061K |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM
|
| CWB308 CWB308CP CWB308CY CWB309 CWB309CP CWB309CY |
CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches
CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16
|
CALOGIC[Calogic, LLC]
Calogic LLC
|
| ST2304SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2303SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2305AS23RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
