PART |
Description |
Maker |
IPSH5N03LA |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
IPP07N03LBG IPP07N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPI80CN10NG IPP80CN10NG10 IPB80CN10NG IPD80CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP10N03LBG IPP10N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages OptiMOS2 Power-Transistor OptiMOS2功率晶体 30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
BSO200N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 20mOhm, 8.8A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO072N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.8mOhm, 15A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSF083N03LQG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSF053N03LTG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|