| PART |
Description |
Maker |
| LDB211G9020C-001 LDB21906M20C-001 LDB21906M05C-001 |
Chip Multilayer Hybrid Baluns 1800 MHz - 2000 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 887 MHz - 925 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 800 MHz - 1000 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 1500 MHz - 1700 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 1600 MHz - 1800 MHz RF TRANSFORMER
|
Murata Manufacturing Co., Ltd.
|
| AN1A3Q AN1A3Q-T AN1A3Q-T/JD AN1A3Q-T/JM AN1A3QC AN |
Hybrid transistor
On-Chip Resistor PNP Silicon Epitaxial Transistor
|
NEC
|
| AA1L3N AA1L3N-T/JD AA1L3N-T/JM AA1L3N/JD AA1L3N/JM |
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
| AA1A3Q AA1A3Q-T/JD AA1A3Q-T/JM AA1A3Q/JD AA1A3Q/JM |
Hybrid transistor
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC Corp.
|
| HD1A4A HD1L3N HD1 HD1A3M HD1A4M HD1F2Q HD1F3P HD1L |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching 片上NPN硅外延电阻晶体管中速开
Hybrid transistor
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AB1L3N AB1F3P AB1A3M AB1A4A AB1A4M AB1J3P AB1L2Q A |
JT 26C 26#20 PIN RECP 片上NPN硅外延电阻晶体管
JT 55C 55#22D PIN RECP 片上NPN硅外延电阻晶体管
on-chip resistor NPN silicon epitaxial transistor
Hybrid transistor
|
NEC, Corp.
NEC[NEC]
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| CP705 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor PNP - High Current Transistor Chip
|
Central Semiconductor Corp
|
| LDB211GXXXXC-XXX LDB181GXXXXC-XXX |
Chip Multilayer Hybrid Baluns
|
Murata Manufacturing
|
| GA1L4L GA1L4L-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
