| PART |
Description |
Maker |
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| APT2X40DC60J APT2X41DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP庐 SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| APT2X21DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| AFM06P2-212 |
Ka Band Power GaAs MESFET
|
Skyworks Solutions Inc.
|
| CF010-01 CF003-01 CF005-01 CF010 |
Broadband Power GaAs MESFET Chip
|
MIMIX[Mimix Broadband]
|
| AFM04P2-000 |
Ka Band Power GaAs MESFET Chip
|
Alpha Industries Inc
ALPHA[Alpha Industries]
|
| AFM06P3-213 AFM06P3-212 |
Ka Band Power GaAs MESFET Chips
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| NE850R599A NE850R59 |
C-BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
NEC
|
| NEZ6472-15D NEZ4450-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NE1069L-4B |
1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET
|
NEC
|
