| PART |
Description |
Maker |
| CRF24060D |
60 W SiC RF Power MESFET Die
|
CREE[Cree, Inc]
|
| RF3930D |
10W GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| S6202 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| APT2X51DC60J APT2X50DC60J |
ISOTOP垄莽 SiC Diode Power Module
ISOTOP? SiC Diode Power Module
|
Microsemi Corporation
|
| APT2X51DC120J APT2X50DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| APT2X21DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AFM06P2-212 |
Ka Band Power GaAs MESFET
|
Skyworks Solutions Inc.
|
