PART |
Description |
Maker |
RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices Overcurrent Protection Device
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Tyco Electronics http://
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VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
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AVX Corporation
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MICROSMD050F MICROSMD050F-2 |
Specification Status: Released PolySwitch?PTC Devices PolySwitch垄莽PTC Devices
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Tyco Electronics
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EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
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Altera Corporation
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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1N751A 1N755A 1N750A 1N757A 1N746A 1N749A 1N752A 1 |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,5.1V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,4.7V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,9.1V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,4.3V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,5.6V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,6.2V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,6.8V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,8.2V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,10V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压,玻璃齐纳稳压二极管) 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,3.3V齐纳电压,玻璃齐纳稳压二极管) 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,3.9V齐纳电压,玻璃齐纳稳压二极管) 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
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ON Semiconductor
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NANOSMDC110F |
PolySwitch?PTC Devices PolySwitch垄莽PTC Devices
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Tyco Electronics
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NANOSMDC016F |
PolySwitch?PTC Devices PolySwitch垄莽PTC Devices
|
Tyco Electronics
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MICROSMD110 |
PolySwitch垄莽PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
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TSM600-250F |
PolySwitch庐PTC Devices PolySwitch?PTC Devices
|
Tyco Electronics
|
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