| PART |
Description |
Maker |
| MCR264-4-D MCR264-4 |
Silicon Controlled Rectifier Reverse Blocking Thyristor(40A400V硅控整流器反向截止晶闸管) 40 A, 200 V, SCR, TO-220AB
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| DGT409BCA6565 DGT409BCA |
Reverse Blocking Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| 2N3004 |
P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| MCR12DCM MCR12DCMT4 MCR12DCMT4G MCR12DCN MCR12DCNT |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR8DCMT4 MCR8DCNT4G MCR8DCM MCR8DCMT4G MCR8DCN MC |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| TIC106A TIC106B TIC106C |
(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductors
|
| MCR12DG MCR12NG MCR12MG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR8DCM-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR202 MCR203 MCR204 MCR206 |
SILICON CONTROLLDE RECTIFIERS REVERSE BLOCKING TRIODE THYRISTORS
|
http://
Motorola, Inc
|
