| PART |
Description |
Maker |
| EFH20 EFH16 |
HIGH VOLTAGE ENCAPSULATED ASSEMBLIES EF HALF WAVE SERIES
|
MICROSEMI[Microsemi Corporation]
|
| IHSM5832 IHSM5832RF3R9L IHSM-5832 IHSM-583268UH/-1 |
<!-- 0006 -->High Current, Flame Retardant Encapsulated Inductor
High Current, Flame Retardant Encapsulated Inductor
HIGH CURRENT, SURFACE MOUNT INDUCTOR
High Current/ Surface Mount Inductor
1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
VISHAY DALE
|
| BAS16W BAS16T BAS516 BAS316 BAS16VY BAS316.115 BAS |
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages
|
NXP Semiconductors N.V.
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| IHSM-7832 IHSM-7832-RG3R9L IHSM-7832RG3R9L IHSM-78 |
High Current, Flame Retardant Encapsulated Inductor
High Current Surface Mount Inductor
High Current, Surface Mount Inductor 高电流，表面贴装电感
1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
VISHAY DALE
|
| TX2-5V TX2-12V TX2-3V TX2-L-1.5V TX2-48V TX2-L2-H- |
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 2阿继电器容量高浪涌电
RELAY, SOLID STATE 40A 240VAC
FILM/M CAPACITANCE=0.1 VOLT=63
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE
|
Nais(Matsushita Electric Wo...
Panasonic, Corp.
YEONHO Electronics Co., Ltd.
NAIS[Nais(Matsushita Electric Works)]
http://
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| AD394 AD394JM AD394SM AD394KM AD394TM AD395 AD395J |
& 2kVDC Isolation; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Custom Solutions Available; Efficiency
ECONOLINE: RO & RE - Industry Standard Pinout- 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Custom
uP Compatible Multiplying Quad 12-Bit D/A Converter
|
Analog Devices, Inc.
AD[Analog Devices]
|
