PART |
Description |
Maker |
K9F4G08U0M K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung Electronic Samsung semiconductor
|
TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB |
64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY 64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
EM39LV088 EM39LV088-90H EM39LV088-90D EM39LV088-90 |
8M Bits (1Mx8) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
WMF128K8-120DEM5 WMF128K8-120FEM5 WMF128K8-120FFC5 |
150ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 120ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 EEPROM EEPROM EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |双酯| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LLCC | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|FP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |计划生育| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOJ|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | SOJ | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOP|32PIN|CERAMIC 60ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 70ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 90ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
|
White Electronic Designs Mosel Vitelic, Corp. International Rectifier, Corp. TE Connectivity, Ltd. KODENSHI, CORP. Microchip Technology, Inc. Century Container
|
K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
EM25LV512-33MS EM25LV512-25KGBS EM25LV512-25MS EM2 |
512 K (64K x 8) Bits Serial Flash Memory
|
ELAN Microelectronics Corp
|
TC58FVT400FT-10 TC58FVT400FT TC58FVB400 TC58FVT400 |
4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
AM29LV104BT-90JIB AM29LV104B AM29LV104BB-120EC AM2 |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector 32-Pin Flash Memory IC SMT S-RAM 128KX8 IS62C1024L SWITCH KEYLOCK SPDT MOM 4A 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 4兆位12亩8位).0伏的CMOS只,引导扇区32引脚闪存
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc.
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
MSM54V12222A |
From old datasheet system 262214 Words x 12 Bits FIELD MEMORY 262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|