| PART |
Description |
Maker |
| EM39LV80090Y EM39LV800 EM39LV80055RD EM39LV80055RH |
8M Bits (512Kx16) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
| EM39LV80070M EM39LV80055RY EM39LV80055RD EM39LV800 |
DDR-I, 13/26-Bit Registered Buffer 分位12Kx16）闪
8M Bits (512Kx16) Flash Memory 分位12Kx16）闪
IC, DIGITAL, OCTAL BUS XCEIVER & 3.3V TO 5.0V, SHFTR BIDRCNTL, V XLATOR, 24PIN T
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
| 29F800 MX29F800TMC-12 MX29F800BMC-90 MX29F800BTC-9 |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| TC58FVM7T2 TC58FVM7T2AFT65 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位）的CMOS闪存
|
Toshiba Semiconductor
Toshiba, Corp.
|
| TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB |
64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| EM39LV040 EM39LV040-45RFDC EM39LV040-45RFDI EM39LV |
4M (512KX8) BITS FLASH MEMORY
|
EMC[ELAN Microelectronics Corp]
|
| K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V |
256M x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
