| PART |
Description |
Maker |
| MAMX-000900-1061LT |
Silicon Double Balanced HMIC Mixer 700-1400 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| MA4EX900L-MOT |
700 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
Silicon Double Balanced HMIC Mixer 700 - 1000 MHz
|
MACOM[Tyco Electronics]
|
| HMC399MS8E |
HIGH IP3 GaAs MMIC MIXER, 700 - 1000 MHz
700 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 10 dB CONVERSION LOSS-MAX
|
Hittite Microwave Corporation
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| LRMS-5L-TR |
400 MHz - 1400 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9.8 dB CONVERSION LOSS-MAX
|
MINI-CIRCUITS
|
| 1.4KESD48A 1.4KESD48AE3 1.4KESD48E3 1.4KESD43A 1.4 |
AXIAL-LEAD TVS
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 110; VC (V): 243; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 24.7; ID (µA): 1; Tol (%): 5;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 21.1; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 120; VC (V): 267; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 12; VC (V): 28; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 110; VC (V): 213; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 11; VC (V): 27.1; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10; 1400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
Microsemi Corporation
|
| HD68450Y-6 HD68450Y-8 HD68450-10 |
DMA Controller
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Solder Termination DMA控制
|
Omron Electronics, LLC
|
| MAAMSS0045 MAAMSS0045TR-3000 MAAMSS0045SMB |
1400 MHz - 2000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HIGH DYNAMIC RANGE LOW NOISE AMPLIFIER 1400 - 2000 MHZ
|
MACOM[Tyco Electronics]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| OSC-13SH OSC-1.3SH |
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 纭??灏??????朵?绠?Ic: 700 mA,Vce: 30 V))
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 硅型射频功率晶体Ic: 700 mA,Vce: 30 V))
|
ADVANCED SEMICONDUCTOR INC
Advanced Semiconductor, Inc.
|
|
