| PART |
Description |
Maker |
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FD1500AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| FP1007R1-R17-R FP1007R2-R17-R FP1007R3-R17-R FP100 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| HF05-1A54-6 HF05-A54-5 HF05-A54-6 HF05-A54-7 HF05- |
High Frequency and High Power Reed Relays
|
Meder Electronic
|
| IRF3704ZLPBF IRF3704ZSLPBF IRF3704ZPBF IRF3704ZSPB |
High Frequency Synchronous Buck
High Frequency Synchronous Buck Converters for Computer Processor Power
|
International Rectifier
|
| CPH3004 |
Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications
|
SANYO[Sanyo Semicon Device]
|
| HG-1012JA HG-2012JA |
(HG-1012JA / HG-2012JA) High Stability High Frequency Oscillator
HIGH-STABILITY HIGH-FREQUENCY OSCILLATOR 高稳定高频振荡器
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HCP0704 HCP0704-1R0-R HCP0704-1R8-R HCP0704-2R3-R |
1 ELEMENT, 3.3 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0704, ROHS COMPLIANT
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| FD1500BV-90DA |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
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