| PART |
Description |
Maker |
| KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
| REF02HP REF01Z REF02Z REF01 REF02HSA REF01HSA REF0 |
DBL DEN JACKSCREW F172
5V 10V Precision Voltage References
5V, 10V Precision Voltage References
5V/ 10V Precision Voltage References
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| KA8507 KA8507D |
10V; 1000mW; compandor
10V; 410mW; compandor
|
Samsung Electronic
|
| MAX197CNI MAX197 |
Multi-Range (±10V, ±5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
Multi-Range (卤10V, 卤5V, 10V, 5V),
Single 5V, 12-Bit DAS with 8 4 Bus Interface
|
MAXIM - Dallas Semiconductor
|
| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| 0526035410M 0526050310M 0290016422MH10-R 052601042 |
CAPACITOR 100UF 35V
CAPACITOR 10UF 50V
CAPACITOR 220UF 16V
CAPACITOR 220UF 10V
CAPACITOR 330UF 10V 10V的电330UF
CAPACITOR 47UF 35V 电容47UF 35V
|
Sanyo Electric Co., Ltd.
Atmel, Corp.
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| GRM21BR71A225K |
Chip Monolithic Ceramic Capacitor 0805 X7R 2.2μF 10V
Chip Monolithic Ceramic Capacitor 0805 X7R 2.2レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM185R61A105K |
Chip Monolithic Ceramic Capacitor 0603 X5R 1μF 10V
Chip Monolithic Ceramic Capacitor 0603 X5R 1レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM185D71A105K |
Chip Monolithic Ceramic Capacitor 0603 X7T 1μF 10V
Chip Monolithic Ceramic Capacitor 0603 X7T 1レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM32ER71A226K |
Chip Monolithic Ceramic Capacitor 1210 X7R 22μF 10V
Chip Monolithic Ceramic Capacitor 1210 X7R 22レF 10V
|
Murata Manufacturing Co., Ltd.
|
