| PART |
Description |
Maker |
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| GL195A |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BD5426EFS |
10W 10W Class-D Speaker Amplifier for Analog Input
|
Rohm
|
| BLF6G38-100 BLF6G38LS-100 |
WiMAX power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G27LS-100 |
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| SE7262L-EK1 SE7262L SE7262L-R |
2.5-2.7 GHz WiMAX Power Amplifier
|
SiGe Semiconductor, Inc.
|
| UPG2409T6X-E2 UPG2409T6X-E2-A |
HIGH POWER SPDT SWITCH FOR WiMAX
|
California Eastern Labs
|
| AWT6261R AWT6261RM20P8 |
2.5-2.7 GHz Mobile WiMAX Power Amplifier Module
|
ANADIGICS, Inc
|
| TDA7269SA |
10W+10W STEREO AMPLIFIER WITH MUTE & ST-BY
|
STMicroelectronics
|
| TDA7297SA |
10W 10W DUAL BRIDGE AMPLIFIER
|
STMicroelectronics
|
