| PART |
Description |
Maker |
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AT3SGCCJ57 AT3SGCCJ59 AT3SGCCJ34 AT3SGCCJ28 AT3SGC |
2.5Gb/s High Sensitivity coplanar APD preamp receiver
|
Bookham, Inc.
|
| FRM5J141GW |
InGaAs-PIN/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM3Z621LT FRM3Z621KT |
InGaAs-PIN/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| FRM3Z121LT FRM3Z121KT |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| NR4510US NR4510US-AZ NR4510UT NR4510UT-AZ |
InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER
|
California Eastern Labs
|
| FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
| G10342-54 G10342-14 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
