| PART |
Description |
Maker |
| GS74116U-15 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 15 ns, PBGA48
|
GSI Technology, Inc.
|
| N04L63W1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit
|
ON Semiconductor
|
| N04L163WC2AT2 N04L163WC2A N04L163WC2AB N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| GS76024B-15I GS76024B-10 GS76024B-10I GS76024B-12 |
6Mb56K x 24Bit）Asynchronous SRAM(6M位（256K x 24位）异步静态RAM)
256K x 24 6Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC
Aeroflex, Inc.
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit）Asynchronous SRAM(8M位（256K x 32位）异步静态RAM) 8MB的（256 × 32位）异步SRAM00万位56K × 32位）异步静态RAM）的
256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
| MR2A16ACYS35 MR2A16AVTS35C MR2A16ACTS35C MR0A16AVY |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 256K x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
|
| CG6258AM |
4Mb (256K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| 19074-0004 19080-0003 19075-0014 19079-0011 19075- |
STAR RING KRIMPTITE (SRA-129-08) 1 mm2, BRASS, RING TERMINAL
MULTI-STUD RING INSULKRIMP (B-2006-MSX) 2 mm2, COPPER ALLOY, RING TERMINAL
STAR RING INSUL ON TAPE (SRB-229-06XT) 2 mm2, BRASS, RING TERMINAL
MULTI-STUD RING (C-1006-MS) 6 mm2, COPPER ALLOY, RING TERMINAL
STAR RING INSUL ON TAPE (SRA-229-06XT) 1 mm2, BRASS, RING TERMINAL
STAR RING KRIMPTITE (SRA-129-06) 1 mm2, BRASS, RING TERMINAL
190770005 1 mm2, BRASS, RING TERMINAL
STAR RING (STEEL) INSUL TAPED (SRA-S-229 1 mm2, STEEL, RING TERMINAL
MULTI-STUD KRIMPTITE TAPED (C-1006-MST)
STAR RING (STEEL) ON TAPE (SRB-S-129-10T
190740025
|
Molex, Inc.
Littelfuse, Inc.
MOLEX INC
|
