| PART |
Description |
Maker |
| HFA25TB60S |
600V 25A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| HFA16PA120C |
1200V 16A HEXFRED Common Cathode Diode in a TO-247AC package
HEXFRED Ultrafast, Soft Recovery Diode
HEXFRED Ultrafast/ Soft Recovery Diode
|
IRF[International Rectifier]
|
| HFA08TB120 HFB08TB120 |
1200V 8A HEXFRED Discrete Diode in a TO-220AC package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode
|
IRF[International Rectifier]
|
| HFA25PB60 |
600V 25A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
| HFA04TB60S HFA04TB60STRR |
Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode
600V 4A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
|
IRF[International Rectifier]
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW25N120VD |
Discrete IGBT (High-Speed V series) 1200V / 25A
|
Fuji Electric
|
| IRG4PH50K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier
|
